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| Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25C) Ratings 180 200 180 200 5 25 15 150 3.5 150 -55 to +150 Unit V 26.00.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 emitter voltage 2SD1975A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 1 2 3 V A A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current 2SD1975 2SD1975A (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 10A, IB = 1A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 200 20 60 20 1.8 2.5 V V MHz pF 200 min typ max 50 50 50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 24 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=1000mA 2SD1975, 2SD1975A IC -- VCE 24 VCE=5V 20 IC -- VBE Collector power dissipation PC (W) 20 Collector current IC (A) 150 16 Collector current IC (A) (1) 800mA 700mA 600mA 500mA 400mA 300mA 200mA 16 TC=-25C 25C 100C 100 12 12 8 100mA 8 50 4 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 4 0 0 1 2 3 4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 1000 hFE -- IC VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 3 300 TC=100C 25C 100 -25C 30 Transition frequency fT (MHz) 1 3 10 30 100 300 1 TC=100C 25C -25C 100 0.3 30 0.1 10 10 0.03 3 3 0.01 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25C 30 ICP IC 100ms Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 3000 Collector current IC (A) 10 3 1 0.3 0.1 0.03 t=10ms 1000 300 DC 100 30 10 1 3 10 30 100 0.01 1 3 10 30 100 300 2SD1975A 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 2SD1975 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD1975, 2SD1975A Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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